 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM8968 5 FEATURES 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 D1 8 D1 7 D2 6 D2 5 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C 20 7 28 2.0 -55 to 150 20 -6.2 -25 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Jan http://www.cetsemi.com CEM8968 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.3A VDS = 15V, ID =5.8A, VGS = 10V VDD = 15V, ID = 1A, VGS = 10V, RGEN =2.7 8 5 25 5 12 1.3 2.3 7 1.2 16 10 50 10 15.9 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 5V, ID = 7A VDS = 15V, VGS = 0V, f = 1.0 MHz 25 600 140 90 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 10V, ID = 7A VGS = 4.5V, ID = 6A 1 22 30 3 28 40 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V A TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM8968 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -5.3A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 12 5 57 21 18.7 3.7 2.3 -6.2 -1.2 24 10 114 42 24.8 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250A VGS = -10V, ID = -6.2A VGS = -4.5V, ID = -4A VDS = -10V, ID = -6.2A VDS = -15V, VGS = 0V, f = 1.0 MHz -1 27 40 9 1140 240 140 Min -30 -1 100 -100 -3 33 52 Typ Max Units V A Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss nA nA V m m S pF pF pF Forward Transconductance Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 N-CHANNEL 20 16 12 8 4 0 0.0 CEM8968 10 VGS=10,6,4.5,4V VGS=3.5V ID, Drain Current (A) ID, Drain Current (A) 8 6 4 25 C 2 0 TJ=125 C 0 1 2 3 -55 C 4 5 6 5 VGS=3V 0.5 1.0 1.5 2.0 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 800 600 400 200 0 Coss Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=7A VGS=10V C, Capacitance (pF) Ciss -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 30 24 18 12 6 CEM8968 10 -ID, Drain Current (A) -VGS=4V -ID, Drain Current (A) -VGS=10,8,6V 8 6 4 2 0 25 C TJ=125 C 0 1 2 3 -55 C 4 5 6 -VGS=3V 0 0 0.5 1 1.5 2 2.5 3 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1500 1250 1000 750 500 250 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-6.2A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V VTH, Normalized Gate-Source Threshold Voltage ID=-250A 10 1 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 10 V =15V DS ID=5.8A 8 6 4 2 0 CEM8968 10 2 RDS(ON)Limit ID, Drain Current (A) 10 1 1ms 10ms 100ms 1s DC 10 0 5 10 -1 0 2.5 5 7.5 10 12.5 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area RDS(ON)Limit P-CHANNEL -VGS, Gate to Source Voltage (V) 10 V =-15V DS ID=-5.3A 10 2 -ID, Drain Current (A) 8 6 4 2 0 10 1 10 0 1ms 10ms 100ms 1s DC 10 -1 0 5 10 15 20 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM8968 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 5 S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 |
Price & Availability of CEM8968
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |